Submicron metal-semiconductor-metal diamond photodiodes toward improving the responsivity
- 15 October 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (16), 163510
- https://doi.org/10.1063/1.2800801
Abstract
Metal-semiconductor-metal deep-ultraviolet detectors with electrode spacings from have been fabricated on a homoepitaxial diamond thin film grown on a Ib-type diamond substrate. A dramatic increase of the deep ultraviolet responsivity is observed when the electrode spacing is scaled down. The reduction in the electrode spacing enables the full depletion of the spacing at low biases, providing a higher responsivity without sacrification of the response speed.
Keywords
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