MBE growth and properties of (100)- and (111)-oriented GaInP/AlInP quantum wells on GaAs substrates
- 2 February 1989
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 95 (1-4), 333-337
- https://doi.org/10.1016/0022-0248(89)90412-0
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum WellsJapanese Journal of Applied Physics, 1988
- Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well StructuresPhysical Review Letters, 1988
- High-power (1.4 W) AlGaInP graded-index separate confinement heterostructure visible (λ∼658 nm) laserApplied Physics Letters, 1987
- Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B SubstratesJapanese Journal of Applied Physics, 1987
- InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphineJournal of Crystal Growth, 1986
- OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applicationsJournal of Crystal Growth, 1986
- Room-temperature operation of MBE-grown InGaP/InGaAlP MQW visible laser diodesElectronics Letters, 1986
- Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength regionApplied Physics Letters, 1984