Investigation of indium–tin-oxide ohmic contact to p-GaN and its application to high-brightness GaN-based light-emitting diodes
- 31 August 2005
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 49 (8), 1381-1386
- https://doi.org/10.1016/j.sse.2005.04.001
Abstract
No abstract availableKeywords
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