Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures
- 13 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2), 195-197
- https://doi.org/10.1063/1.106961
Abstract
Admittance spectroscopy has been used to measure conduction‐ and valence‐band discontinuities in Si/Si1−xGex heterojunctions (0<x1−xGex films, and it decreased when the Si1−xGex layers started to relax. These results indicate that admittance spectroscopy can be used to monitor the electronic properties of transistorlike Si/Si1−xGex/Si heterostructures.Keywords
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