Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films
- 1 January 2004
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Solid Solubility of Holmium, Yttrium, and Dysprosium in BaTiO3Journal of the American Ceramic Society, 2004
- Applicability of the Crystallite Group Method to Fibre Textured SpecimensMaterials Science Forum, 2004
- Phase diagrams and dielectric response of epitaxial barium strontium titanate films: A theoretical analysisJournal of Applied Physics, 2002
- Microstructure of (Ba, Sr)TiO3 thin films deposited by physical vapor deposition at 480 °C and its influence on the dielectric propertiesApplied Physics Letters, 2000
- Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin filmsJournal of Applied Physics, 2000
- The effect of stress on the dielectric properties of barium strontium titanate thin filmsApplied Physics Letters, 1999
- Incorporation of Yttrium in Barium Titanate CeramicsJournal of the American Ceramic Society, 1999
- Effect of Y-Doping on the Dielectric Properties of BatiO3 Films Deposited in Reducing Atmospheres Using Pulsed Laser DepositionMRS Proceedings, 1999
- Effect of Y-Doping on Resistance Degradation of Multilayer Ceramic Capacitors with Ni Electrodes under the Highly Accelerated Life TestJapanese Journal of Applied Physics, 1997
- (Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputteringApplied Physics Letters, 1994