Uniaxial locked growth of high-quality epitaxial ZnO films on -Al2O3
- 28 January 2000
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 209 (2-3), 532-536
- https://doi.org/10.1016/s0022-0248(99)00614-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of high-quality epitaxial ZnO films on α-Al2O3Journal of Crystal Growth, 1999
- Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxyJournal of Crystal Growth, 1997
- MBE growth and properties of ZnO on sapphire and SiC substratesJournal of Electronic Materials, 1996
- Plasma-enhanced metalorganic chemical vapor deposition of c-axis oriented and epitaxial films of ZnO at low substrate temperaturesApplied Physics Letters, 1981