Exchange carrier-carrier scattering of photoexcited spin-polarized carriers in GaAs quantum wells: Monte Carlo study
- 15 March 1994
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (11), 7443-7452
- https://doi.org/10.1103/physrevb.49.7443
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Monte-Carlo Simulations of the Coulomb Boltzmann Kinetics in a Quasi-Two-Dimensional Electron–Hole Plasma for Various Screening ModelsPhysica Status Solidi (b), 1992
- Numerical studies of femtosecond carrier dynamics in GaAsPhysical Review B, 1990
- Femtosecond-pump, continuum-probe nonlinear absorption in GaAsPhysical Review Letters, 1990
- Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructuresSolid-State Electronics, 1989
- Femtosecond Carrier Thermalization in Dense Fermi SeasPhysical Review Letters, 1988
- Monte Carlo modeling of femtosecond relaxation processes in AlGaAs/GaAs quantum wellsIEEE Journal of Quantum Electronics, 1988
- Transient and steady-state electron transport in GaAs/As heterojunctions at low temperatures: The effects of electron-electron interactionsPhysical Review B, 1988
- Ensemble Monte Carlo simulations of femtosecond thermalization of low-energy photoexcited electrons in GaAs quantum wellsJournal of Applied Physics, 1987
- Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum WellsPhysical Review Letters, 1986
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985