A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots
- 11 April 2008
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 18 (7), 1112-1118
- https://doi.org/10.1002/adfm.200700567
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Memory effect from charge trapping in layered organic structuresApplied Physics Letters, 2004
- Electrical bistability of polyfluorene devicesOrganic Electronics, 2004
- Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layerApplied Physics Letters, 2004
- Switching and memory devices based on a polythiophene derivative for data-storage applicationsSynthetic Metals, 2004
- Mechanism for bistability in organic memory elementsApplied Physics Letters, 2004
- Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codepositionApplied Physics Letters, 2003
- Nonvolatile electrical bistability of organic/metal-nanocluster/organic systemApplied Physics Letters, 2003
- Large Conductance Switching and Binary Operation in Organic Devices: Role of Functional GroupsThe Journal of Physical Chemistry B, 2003
- Organic electrical bistable devices and rewritable memory cellsApplied Physics Letters, 2002
- Organic bistable light-emitting devicesApplied Physics Letters, 2002