Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric
- 1 May 2006
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 504 (1-2), 192-196
- https://doi.org/10.1016/j.tsf.2005.09.123
Abstract
No abstract availableKeywords
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