GaAs1−yPy heterojunction lasers
- 1 September 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9), 3991-3993
- https://doi.org/10.1063/1.324235
Abstract
Data are presented showing that low‐threshold (300 °K) visible‐spectrum GaAs1−yPy and In1−xGaxP1−zAsz DH laser diodes can be grown on GaAs1−yPy substrates of composition at least as high as y=0.41, which corresponds to a short‐wavelength limit of ∼6420 Å for the ternary and ∼6180 Å for the quaternary.Keywords
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