Radiation damage enhancement of the penetration of water into silica glass

Abstract

A dramatic increase in the rate of penetration of water into silica glass as a result of ion implantation with noble gas ions is reported. The damage caused by the implantation leads to the rapid uptake of water to a saturation concentration of hydrogen of approximately 1022 atoms/cm3. The effects of ion implant dose and ion mass are investigated. The results indicate that the mechanism responsible for this enhanced penetration is the creation of chemically reactive defects which greatly enhance the reaction between the water and the silica network.