Microwave InAlAs/InGaAs/InP HEMTs: status and applications
- 1 January 1990
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The development of HEMTs based on the InAlAs/InGaAs/InP materials system for high-frequency analog applications is reported. Devices with 0.15- mu m gatelengths have demonstrated extrinsic transconductance of 1500 mS/mm and extrapolated maximum frequency of oscillation f/sub max/ greater than 450 GHz. The noise figure is the lowest of any room-temperature receiver technology over the 5 to 100 GHz frequency range. Prospects for power amplification are excellent: power-added efficiency of 41% has already been demonstrated at 60 GHz. The integration of these devices into monolithic microwave integrated circuits (MMICs) is discussed.<>Keywords
This publication has 3 references indexed in Scilit:
- High-performance InP-based HEMT millimeter-wave low-noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979