The effect of boron implantation on the etch rate of thermally grown has been studied for a wide range of energies, doses, and anneal conditions. For unannealed oxides, a significant increase in etch rate is observed with increasing dose. The depth of maximum damage as determined by the peak in the etch rate profile occurs at approximately 60% of the ion range as predicted by LSS theory. When annealing is carried out in nitrogen, high temperatures (∼1200°C) are required to remove all measurable damage created by high dose implants. When an oxygen or steam ambient is used, considerably lower temperatures achieve the same result. Although the ion profile as determined from the etch rates can be approximated by LSS theory, skewing of the profile towards the surface indicates that higher moments are required in the distribution calculation.