Excitation-energy dependence in theL2,3fluorescence spectrum of Si

Abstract

The $L_2$,3 emission spectrum of c-Si, excited by monochromatized synchrotron radiation, has been recorded with a 5-m Rowland spectrometer. Dramatic spectral changes are observed as the excitation energy is varied from the 2p binding energy up to 144 eV. It is proposed that a spectator electron, close to the bottom of the conduction band, influences the emission spectrum. The observations suggest that intraband shakeup is important in the excitation process, and that a population of low-lying levels, via initial-state shakeup, influences the high-energy-excited Si L emission spectrum.