High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- 25 May 2011
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 4 (6), 066501
- https://doi.org/10.1143/apex.4.066501
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Formation of Thermally Stable AgCu-Based Reflectors by a Two Step Alloy Method for Vertical Light-Emitting DiodesJapanese Journal of Applied Physics, 2010
- The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodesNanotechnology, 2009
- Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off processApplied Physics Letters, 2009
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) SubstrateJapanese Journal of Applied Physics, 2008
- Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodesApplied Physics Letters, 2005
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface rougheningApplied Physics Letters, 2004
- Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surfaceJournal of Applied Physics, 2003
- Effect of the Nucleation Layer on Stress during Cantilever Epitaxy of GaN on Si (111)physica status solidi (a), 2002
- GaN-based optoelectronics on silicon substratesMaterials Science and Engineering B, 2002
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996