Pressure-induced compensation in n-type AgInSe2
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1), 21-22
- https://doi.org/10.1063/1.89832
Abstract
The pressure dependence of resisitivity of n‐type AgInSe2 has been investigated up to 40 kbar hydrostatic pressure. The resisitivity shows a slight increase with pressure up to 26 kbar but exhibits a phenomenal time‐dependent rise in the region between 28 and 32 kbar. The sample resisitivity rises by a factor of 2×106 before saturating. We believe that this effect is due to the formation of compensating defect centers in the crystal, prior to the sluggish transformation from the chalcopyrite to the NaCl‐type structure.Keywords
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