Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4and SF6
- 22 November 2010
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 49 (11)
- https://doi.org/10.1143/jjap.49.116506
Abstract
No abstract availableKeywords
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