Trap distribution in ZnIn2S4from photoconductivity analysis
- 11 September 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (13), 1881-1892
- https://doi.org/10.1088/0022-3727/9/13/008
Abstract
Photoconductivity, quenching, thermally stimulated current and decay characteristics are studied in ZnIn2S4 single crystals. Evidence is obtained for the presence of three impurity levels taking part in the photoconductivity process. Optical quenching is attributed to a sensitization centre, which acts as a competitive recombination level. An exponential distribution of electron traps is revealed both by pulsed photoconductivity and by thermocurrent analysis. The two experimental techniques accordingly provide the value of 70 meV/decade for the trap distribution. Some aspects of the nature of the impurity centres are examined.Keywords
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