Determination of deep levels in Cu-doped GaP using transient-current spectroscopy
- 1 March 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (3), 1131-1133
- https://doi.org/10.1063/1.322695
Abstract
A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient‐current decay is described and applied to Cu‐doped GaP. It is shown that the important deep‐level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu‐doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10−16 cm2.Keywords
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