Thin Ta2O5 films prepared by low pressure metal organic CVD
- 31 July 1993
- journal article
- Published by Elsevier BV in Microelectronics Journal
- Vol. 24 (4), 421-426
- https://doi.org/10.1016/0026-2692(93)90048-j
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMsIEEE Transactions on Electron Devices, 1990
- Statistical equipment modeling for VLSI manufacturing: an application for LPCVDIEEE Transactions on Semiconductor Manufacturing, 1990