100 GHz dynamic frequency divider in SiGe bipolar technology
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (2), 217-218
- https://doi.org/10.1049/el:20030164
Abstract
A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a −3.8 V supply and designed in IBM's 0.12 µm SiGe technology with fT of 207 GHz and fMAX of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM's 0.18 µm SiGe BiCMOS technology.Keywords
This publication has 3 references indexed in Scilit:
- 71.8 GHz static frequency divider in a SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002
- 75 GHz ECL static frequency divider using InAlAs/InGaAs HBTsElectronics Letters, 2001