Non-uniform carrier accumulation in optical confinement layer as ultimate power limitation in ultra-high-power broad-waveguide pulsed InGaAs/GaAs/AlGaAs laser diodes
- 1 January 2006
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 42 (22), 1283-1284
- https://doi.org/10.1049/el:20062162
Abstract
The effect of spatially non-uniform accumulation of carriers in the optical confinement layer of broad-waveguide InGaAs/GaAs/AlGaAs-based ultra-high power lasers operating at 1.06 µm under very high pulsed pumping has been analysed and shown to be an important limitation for the output power. A calculation using a semi-analytical theory is in good agreement with the recently published experimental data. A narrow asymmetric waveguide laser construction is predicted to alleviate the problem.Keywords
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