Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K
- 1 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (9), 552-554
- https://doi.org/10.1063/1.88820
Abstract
Double‐heterostructure Pb1−xSnxTe lasers with active regions of Pb0.782Sn0.218Te have been grown by molecular‐beam epitaxy which operate cw up to heat‐sink temperatures of 114 K. Temperature tuning of the emission from 15.9 to 8.54 μm wavelength is obtained, with emission at 77 K near 11.5 μm. The current‐voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency.Keywords
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