Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing
- 1 January 2016
- journal article
- Published by Elsevier BV in Journal of Alloys and Compounds
- Vol. 656, 132-137
- https://doi.org/10.1016/j.jallcom.2015.09.231
Abstract
No abstract availableKeywords
Funding Information
- Deanship of Scientific Research at King Saud University (1436-014)
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