Study of symmetry and disordering of Si(111)-7×7 surfaces by optical second harmonic generation

Abstract

A detailed study of the polarization dependences of the second‐harmonic generation process from clean Si(111)‐7×7 surfaces is presented and analyzed in terms of the symmetry properties of the surface. Results from real‐time, i n s i t u measurements on disordering of the Si(111)‐7×7 surface by oxidation and Ar+ ion bombardment are also reported.