Field-dependent quantum efficiency in hydrogenated amorphous silicon
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7), 607-608
- https://doi.org/10.1063/1.91564
Abstract
A model calculation of the electric field dependence of the quantum efficiency for electron‐hole pair production in hydrogenated amorphous silicon is presented and compared with recent measurements of the electric field dependence of the solar‐cell collection efficiency. The theory, based on electric field reduction of geminate recombination of the excited electron‐hole pair, agrees well with experiment.Keywords
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