Megarad-Resistant 10nm Gate Dielectrics
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6), 4389-4391
- https://doi.org/10.1109/tns.1981.4335735
Abstract
Dielectrics of nitrided silicon dioxide of the order of 10nm thick have been made which withstand 1Mrad(Si) of electron irradiation essientially unaltered.Keywords
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