Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- 1 May 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (5R), 930-933
- https://doi.org/10.1143/jjap.29.930
Abstract
The c-BN (cubic BN)/BN X /B/Si structure was formed using plasma CVD techniques. In contrast with the direct growth of c-BN films, the adherence of the structure on Si was entirely satisfactory. The characterization of buffer layers (BN(X=0.6), BN(X=0.3), B) by X-ray photoelectron, infrared absorption spectroscopies and internal stress measurements show that the c-BN/BN X /B/Si structure is useful as a mechanically stable passivation film.Keywords
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