InxGa1−xAs−InyGa1−yAs strained-layer superlattices: A proposal for useful, new electronic materials

Abstract

Strained-layer superlattices grown from lattice-mismatched layers of InGaAs are proposed as useful electronic materials with tailorable electronic properties. The first study of the electronic properties of these structures has been carried out. Band-gap energies are calculated as a function of layer thicknesses and compositions. The results demonstrate for the first time that the lattice constant, band gap, and transport properties of ternary strained-layer superlattices can be independently varied. This new capability could permit InGaAs strained-layer superlattices to significantly broaden the range of applications associated with the InGaAs ternary compound.