Magnetocapacitance and exponential magnetoresistance in manganite–titanate heterojunctions
- 16 February 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (8), 082504
- https://doi.org/10.1063/1.1868882
Abstract
We present a rectifying manganite–titanate heterojunction exhibiting a magnetic field tunable depletion layer. This creates a large positive magnetocapacitance, a direct measure of the field-induced reduction of the effective depletion width across the junction. Furthermore, the reduction of the junction barrier shifts the forward bias characteristics, giving exponentially enhanced differential magnetoresistance, occurring despite the absence of a spin filter. These results provide a unique probe of a Mott insulator∕band insulator interface, and further suggest electronic devices incorporating the magnetic field sensitivity of these strongly correlated electron materials.Keywords
This publication has 21 references indexed in Scilit:
- Tunneling Magnetoresistance above Room Temperature in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3JunctionsJapanese Journal of Applied Physics, 2003
- Magnetocapacitance: Probe of Spin-Dependent PotentialsPhysical Review Letters, 2003
- Observation of Minority Spin Character of the New Electron Doped Manganite from Tunneling MagnetoresistancePhysical Review Letters, 2003
- On the nature of grain boundaries in the colossal magnetoresistance manganitesEurophysics Letters, 1999
- First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting OxidesJapanese Journal of Applied Physics, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Spin-Polarized Intergrain Tunneling inPhysical Review Letters, 1996
- Dielectric Properties of Strontium Titanate at Low TemperaturePhysical Review B, 1970
- Phonon Structure in Tunneling in SrTiPhysical Review B, 1965
- Electronic Transport in Strontium TitanatePhysical Review B, 1964