ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2
- 1 September 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (5), 312-313
- https://doi.org/10.1063/1.89059
Abstract
The occurrence of phosphorus antisite defect centers on cation sites in GaP, CdSiP2, and ZnGeP2 has been demonstrated by electron spin resonance. The paramagnetic defect is identified by its characteristic hyperfine and ligand hyperfine interaction, representative for a 31P31P4 cluster. The possible role of the antisite lattice defect as a center of nonradiative recombination in LEC‐grown GaP is emphasized.Keywords
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