The complex capacitance of Si inversion layers in the quantized resistance regime
- 1 July 1984
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 142 (1-3), 332-338
- https://doi.org/10.1016/0039-6028(84)90331-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980
- Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1974
- Acquired Type 3 HyperlipoproteinemiaArchives of Internal Medicine, 1972
- Capacitance Observations of Landau Levels in Surface QuantizationPhysical Review Letters, 1968
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966