Structural studies of the adsorption of Cs and O2 on Si(100)
- 30 June 1974
- journal article
- other
- Published by Elsevier BV in Surface Science
- Vol. 43 (2), 647-652
- https://doi.org/10.1016/0039-6028(74)90283-0
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- A study of the nitridation of silicon surfaces by low-energy electron diffraction and auger electron spectroscopySurface Science, 1973
- LEED, Auger and plasmon studies of negative electron affinity on Si produced by the adsorption of Cs and OSurface Science, 1973
- Structural and electronic model of negative electron affinity on the Si/Cs/O surfaceSurface Science, 1973
- Cs–O negative-electron-affinity surfaces on siliconApplied Physics Letters, 1972
- INFRARED PHOTOEMISSION FROM SILICONApplied Physics Letters, 1970
- Use of LEED Apparatus for the Detection and Identification of Surface ContaminantsJournal of Applied Physics, 1967
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965
- Low-Energy Electron Diffraction Study of Silicon Surface StructuresThe Journal of Chemical Physics, 1962
- Model for the (100) Surfaces of Silicon and GermaniumThe Journal of Chemical Physics, 1962
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959