Unpassivated AlGaN∕GaN HEMTs with CW power density of 3.2 W∕mm at 25 GHz grown by plasma-assisted MBE
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (8), 694-695
- https://doi.org/10.1049/el:20030451
Abstract
The Ka-band power performance of unpassivated AlGaN/GaN HEMTs grown by plasma-assisted molecular beam epitaxy on 6H-SiC substrates is reported. Transistors with a gate length of 0.2 µm, source-drain spacing of 2 µm, and 100 µm periphery displayed maximum drain currents greater than 1.6 A/mm. Small signal S-parameter measurements yielded an fT of 53 GHz and fMAX of 109 GHz. Passive load pull measurements at 25 GHz of 0.2×100 µm transistors yielded a power density of 3.2 W/mm with 30% PAE and 44% drain efficiency at 1.8 dB gain compression. To the knowledge of the authors, this is the first report of RF output power above 20 GHz from MBE-grown AlGaN/GaN HEMTs.Keywords
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