Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire
- 19 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (21), 3090-3092
- https://doi.org/10.1063/1.122682
Abstract
The early stages of hydride vapor phase epitaxy (HVPE) of GaN on sapphire were studied using atomic force microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and x-ray diffraction rocking curves. At the high growth rate used (∼33 nm/s), the films appear to be fully coalesced for growth periods as short as 1 s. A distinct surface and subsequent bulk transformation were observed, resulting in significantly smoother film surfaces and improved bulk morphology. The growth of thick (i.e., 300 μm) GaN films using HVPE offers a promising technique for the deposition of high-quality substrates for GaN homoepitaxy.Keywords
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