Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (9), 1231-1233
- https://doi.org/10.1109/lpt.2002.801597
Abstract
P-type doping is used to demonstrate high-To, low-threshold 1-3 /spl mu/m InAs quantum-dot lasers. A 5-/spl mu/m-wide oxide confined stripe laser with a 700-/spl mu/m-long cavity exhibits a pulsed T/sub 0/ = 213 K (196 K CW) from 0/spl deg/C to 80/spl deg/C. At room temperature, the devices have a CW threshold current of /spl sim/4.4 mA with an output power over 15 mW. The threshold at 100/spl deg/C is 8.4 mA with an output power over 8 mW.Keywords
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