Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates
- 23 March 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (13)
- https://doi.org/10.1063/1.1875759
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistorApplied Physics Letters, 2003
- Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) filmsJournal of Applied Physics, 2002
- As-mediated stacking fault in wurtzite GaN epilayersApplied Physics Letters, 2002
- Arsenic surface segregation during the molecular-beam epitaxial growth of GaAs embedded in wurtzite GaNApplied Physics Letters, 2002
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium NitrideJapanese Journal of Applied Physics, 2001
- Influence of microstructure on the carrier concentration of Mg-doped GaN filmsApplied Physics Letters, 2001
- Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technologyReviews of Modern Physics, 2001
- Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eVJournal of Applied Physics, 2001
- III–nitrides: Growth, characterization, and propertiesJournal of Applied Physics, 2000
- Thermal ExpansionPublished by Springer Science and Business Media LLC ,1977