Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
- 10 August 2011
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 4 (9)
- https://doi.org/10.1143/apex.4.092101
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphireApplied Physics Letters, 2010
- Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diodeApplied Physics Letters, 2008
- Ultraviolet semiconductor laser diodes on bulk AlNJournal of Applied Physics, 2007
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire TemplatesJapanese Journal of Applied Physics, 2006
- Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levelsApplied Physics Letters, 2004
- Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nmApplied Physics Letters, 2002
- Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaNApplied Physics Letters, 2001
- Ultraviolet GaN Single Quantum Well Laser DiodesJapanese Journal of Applied Physics, 2001
- AlGaN/GaN quantum well ultraviolet light emitting diodesApplied Physics Letters, 1998