Reliability of the electrical properties of the BF2+ ion implanted polycrystalline diamond film
- 26 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (4), 524-526
- https://doi.org/10.1063/1.109993
Abstract
The resistance of the BF2+ ion implanted polycrystalline diamond film drifted higher with time when the diamond film was exposed in air. The reliable resistance of the implanted diamond film could be obtained after the heat treatment at high temperature under vacuum. Temperature dependence of the reliable resistance of the BF2+ ion implanted diamond film indicated two activation energies within the temperature range from room temperature to 400 °C. The effect of gas exposure on the resistance of the implanted diamond film was discussed.Keywords
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