Incorporation of oxygen into nanocrystalline silicon
- 31 January 1986
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 57 (4), 215-222
- https://doi.org/10.1016/0038-1098(86)90142-0
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorptionJournal of Physics C: Solid State Physics, 1983
- Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopySolid State Communications, 1983
- Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy filmsPhysical Review B, 1983
- Optical absorption in hydrogenated microcrystalline siliconJournal of Physics C: Solid State Physics, 1983
- Highlights of preparative solid state chemistry in low pressure plasmasPublished by Walter de Gruyter GmbH ,1982
- Effect of oxygen on the optoelectronic properties of amorphous hydrogenated siliconPhysical Review B, 1981
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968