Photomagnetoelectric Effect in Germanium and Silicon
- 15 June 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 94 (6), 1564-1566
- https://doi.org/10.1103/physrev.94.1564
Abstract
The transient part of the photomagnetoelectric (p.m.e.) voltage in germanium has been studied. It has been observed that the p.m.e. voltage reached its steady-state value by passing through a maximum instead of reaching it by progressive increase. The p.m.e. effect in sillicon has been observed and a few experimental results are given.Keywords
This publication has 3 references indexed in Scilit:
- Contribution à l'étude de l'effet photomagnéto-électrique sur le germaniumAnnales de Physique, 1954
- Photoelectromagnetic and Photoconductive Effects in Lead Sulphide Single CrystalsProceedings of the Physical Society. Section B, 1953
- Photoelectromagnetic and Photodiffusion Effects in GermaniumProceedings of the Physical Society. Section B, 1953