The physical state of implanted tungsten in copper
- 15 March 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (6), 314-316
- https://doi.org/10.1063/1.88766
Abstract
The physical state of W implanted in Cu has been studied by 4He+ ion channeling and transmission electron microscopy. At implant concentrations ≲1 at.%, W is in solid solution but may form elemental bcc precipitates on annealing to ≳450 °C. For implant concentrations of ∼10 at.%, a disordered layer of Cu and W is formed with the W occupying no regular lattice sites; on annealing W precipitates are formed with dimensions of a few hundred angstroms.Keywords
This publication has 1 reference indexed in Scilit:
- Formation of substitutional alloys by ion implantation in metalsApplied Physics Letters, 1974