Calculations of point defect concentrations and nonstoichiometry in GaAs
- 1 January 1971
- journal article
- Published by Elsevier BV in Journal of Physics and Chemistry of Solids
- Vol. 32 (8), 1739-1753
- https://doi.org/10.1016/s0022-3697(71)80140-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAsApplied Physics Letters, 1970
- Optical Properties of n-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAsJournal of Applied Physics, 1969
- Annealing of N-Type GaAs under Excess Arsenic VaporJapanese Journal of Applied Physics, 1969
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966
- Anelasticity Due to Intrinsic Defects in GaAsJournal of Applied Physics, 1966
- Phase extent of gallium arsenide determined by the lattice constant and density methodActa Crystallographica, 1965
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- OBSERVATION OF PARAMAGNETIC RESONANCE CENTERS IN GaAs IN UNUSUALLY HIGH CONCENTRATIONSApplied Physics Letters, 1963
- DEFECTS IN GaAs PRODUCED BY LITHIUMApplied Physics Letters, 1963