Alternate explanation of 1f noise in ion-implanted MOSFETs
- 30 September 1983
- journal article
- research article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 26 (9), 927-928
- https://doi.org/10.1016/0038-1101(83)90067-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low 1/f noise design of Hi-CMOS devicesIEEE Transactions on Electron Devices, 1982
- Discrimination between 1/f noise models in junctions field effect transistors and metal-oxide-semiconductor field effect transistors: Numerical resultsJournal of Applied Physics, 1981
- Hot electron noise effects in buried channel MOSFETsSolid-State Electronics, 1981
- Discrimination between two noise models in metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1981
- Flicker noise of hot electrons in silicon at T = 78 KPhysics Letters A, 1980