Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering
- 1 May 2002
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 190 (1), 560-564
- https://doi.org/10.1016/s0168-583x(01)01210-1
Abstract
No abstract availableKeywords
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