Prospects of Ga/In/Al–N Nanometer Devices: Electronic Structure, Scattering Rates, and High Field Transport
- 1 November 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 204 (1), 133-135
- https://doi.org/10.1002/1521-3951(199711)204:1<133::aid-pssb133>3.0.co;2-e
Abstract
No abstract availableKeywords
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