Moderate mobility enhancement in single period AlxGa1−x As/GaAs heterojunctions with GaAs on top
- 1 April 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4), 3321-3323
- https://doi.org/10.1063/1.330992
Abstract
Selectively doped single period AlxGa1−x As/GaAs heterojunctions with the GaAs layer on top of AlxGa1−xAs were prepared by molecular beam epitaxy. Moderate electron mobility enhancement was achieved when the samples were grown near a substrate surface temperature of 700 °C. Samples grown well below and well above 700 °C did not show observable mobility enhancement. The samples grown at 700 °C and with an electron concentration of 1017 cm−3 exhibited 300 K mobilities of about 4 500 cm2/Vs and 78 K mobilities of 8500 cm2/Vs, which is about a factor of 2 higher than that of bulk GaAs at 78 K. To our knowledge, this is the first report of mobility enhancement in these inverted single period AlxGa1−x As/GaAs heterostructures.Keywords
This publication has 12 references indexed in Scilit:
- Hall effect and mobility in heterojunction layersJournal of Applied Physics, 1982
- Dependence of the structural and optical properties of GaAs-Ga1−xAlxAs multiquantum-well structures on growth temperatureApplied Physics Letters, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- Transport properties in GaAs-AlxGa1−xAs heterostructures and MESFET applicationElectronics Letters, 1981
- Extremely high electron mobilities in modulation-doped GaAs-AlxGa1−xAs heterojunction superlatticesElectronics Letters, 1981
- High mobilities in AlxGa1−xAs-GaAs heterojuntionsApplied Physics Letters, 1980
- Transport properties of Sn-doped AlxGa1−xAs grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978