Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
- 14 July 2015
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 8 (8), 085501
- https://doi.org/10.7567/apex.8.085501
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- High-quality NbN nanofilms on a GaN/AlN heterostructureAIP Advances, 2014
- Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layersSuperconductor Science and Technology, 2014
- VESTA 3for three-dimensional visualization of crystal, volumetric and morphology dataJournal of Applied Crystallography, 2011
- Defects limiting performance of devices fabricated on GaN/metal heterostructureApplied Physics Letters, 2008
- Properties of epitaxial GaN on refractory metal substratesApplied Physics Letters, 2007
- c139, VI.1.5.1 Binary nitrides and their solid solutionsPublished by Springer Science and Business Media LLC ,2005
- Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB2 and the suitability of ZrB2 as a substrate for GaN filmJournal of Applied Physics, 2003
- Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray DiffractionMaterials Science Forum, 1998
- Stable and epitaxial metal/III-V semiconductor heterostructuresMaterials Science Reports, 1990
- Appraisal of semiconductor-metal-semiconductor transistorSolid-State Electronics, 1966