Mechanism of Zn passivation in AlGaInP layer grown by metalorganic chemical vapor deposition
- 2 December 1994
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 145 (1-4), 147-152
- https://doi.org/10.1016/0022-0248(94)91042-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Effect of cap layer and cooling atmosphere on the hole concentration of p(Zn)-AlGaInP grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1992
- Effect of substrate orientation on Zn-doping of AIGalnP grown by atmospheric pressure orgamometallic vapor phase epitaxyJournal of Electronic Materials, 1990
- Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1989
- Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxyApplied Physics Letters, 1988