Atomically Precise Placement of Single Dopants in Si

Abstract

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of ${\mathrm{P}\mathrm{H}}_3$ with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with $\sim 1\mathrm{n}\mathrm{m}$ accuracy and the creation of nanometer wide lines of incorporated P atoms.